| Price | $1 |
|---|---|
| Category | Components |
| Availability | In stock |
| Delivery | Shipped across Lebanon, or collect from the lab |
A big N-channel HEXFET for low-voltage, high-current switching: 55 V, 8 milliohms of on-resistance and 110 A of continuous drain current in a TO-220 with a proper heatsink. That very low RDS(on) is why it turns up in 12 V motor drivers, inverters and battery protection. It is not a logic-level FET - the threshold is 2 to 4 V and it needs a full 10 V on the gate to reach 8 milliohms, so drive it from a gate driver, not a 5 V pin.
Key features
- N-channel MOSFET, 55 V, 110 A at 25 degC case
- 8.0 milliohm max on-resistance at VGS = 10 V
- 200 W dissipation, TO-220AB package
- Needs about 10 V of gate drive - not logic level
- Gate threshold 2 V to 4 V, VGS max +/-20 V
- Fully avalanche rated, 146 nC gate charge
Details
Specifications
| Part | IRF3205 |
|---|---|
| Type | N-channel power MOSFET (HEXFET) |
| Package | TO-220AB |
| Drain-source voltage | 55 V |
| On-resistance | 8.0 milliohm max at VGS = 10 V, ID = 62 A |
| Continuous drain current | 110 A at 25 degC case, 80 A at 100 degC |
| Pulsed drain current | 390 A |
| Power dissipation | 200 W at 25 degC case |
| Gate-source voltage | +/-20 V |
| Gate threshold voltage | 2.0 V to 4.0 V |
| Total gate charge | 146 nC |
| Junction temperature | -55 degC to +175 degC |
