| Price | $0.30 |
|---|---|
| Category | Components |
| Availability | In stock |
| Delivery | Shipped across Lebanon, or collect from the lab |
A phototransistor in a sealed TO-18 metal can: light falling on the chip is amplified by the transistor's own gain, so it delivers far more current per unit of light than a bare photodiode. Rated 40V collector-emitter, 50 mA and 150 mW, with a narrow viewing angle that helps it see one beam and ignore the rest of the room. Good for beam-break sensors, optical encoders and IR detection - choose a photodiode instead when you need speed and linearity rather than sensitivity.
Key features
- Silicon NPN phototransistor in a TO-18 metal can
- 40V collector-emitter, 50 mA, 150 mW
- Three leads - the base is brought out for biasing
- Narrow angular response, sensitive into the near IR
- More sensitive than a photodiode, slower to respond
- For beam-breaks, encoders and IR detection
Details
Specifications
| Model | ST-1KL3B |
|---|---|
| Type | Silicon NPN phototransistor |
| Package | TO-18 hermetic metal can, 3 leads |
| Collector-emitter voltage | 40V max |
| Emitter-collector voltage | 6V max |
| Collector current | 50 mA max |
| Power dissipation | 150 mW |
| Operating temperature | -30 to +100 °C |
| Leads | Collector, emitter and base |
